may 1995 - ed : 2b specific to the following opera- tions: snubbing or clamping, demagnetization and rectification. ultra-fast,soft and noise-free recovery. very low overall power losses and particulary low forward voltage. designed for high pulsed current operations. cecc approved. features and benefits preliminary data a k sod93 (plastic) STTB3006P the turboswitch is a very high performance series of ultra-fast high voltage power diodes from 600v to 1200v. turboswitch, b family, drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. they are particularly suitable in the primary circuit of an smps as snubber, clamping or demagnetizing diodes, and also in most power converters as high performance rectifier diodes. packaged in sod93 and in isolated dop3i, these 600v devices are particularly intended for use on 240v domestic mains. description i f(av) 30a v rrm 600v t rr (typ) 60ns v f (max) 1.3v main products characteristics symbol parameter value unit v rrm repetitive peak reverse voltage 600 v v rsm non repetitive peak reverse voltage 600 v i f(rms) rms forward current 50 a i frm repetitive peak forward current (tp = 5 m s, f = 1khz) 700 a t j max operating junction temperature -65 to 150 c t stg storage temperature -65 to 150 c tm : turboswitch is a trademark of sgs-thomson microelectronics. absolute maximum ratings STTB3006P(i) ? turboswitch ? obo. ultra-fast high voltage diode a k a k isolated dop3i (plastic) STTB3006Pi 1/6
symbol parameter test conditions min typ max unit v f* forward voltage drop i f =30a tj = 25 c tj = 125 c 1.4 1.3 v v i r** reverse leakage current v r =0.8 xv rrm tj = 25 c tj = 125 c 150 5.0 m a ma static electrical characteristics (see fig.5) symbol parameter conditions value unit r th(j-c) junction to case thermal resistance STTB3006P STTB3006Pi 1.2 1.8 c/w p 1 conduction power dissipation (see fig. 5) i f(av) = 30a d =0.5 STTB3006P tc= 85 c STTB3006Pi tc= 45 c 54 w p max total power dissipation pmax = p1 + p3 (p3 = 10% p1) sttb 3006p tc= 78 c STTB3006Pi tc= 42 c 60 w thermal and power data symbol parameter test conditions min typ max unit t rr reverse recovery time tj=25 c i f = 0.5 a i r = 1a irr = 0.25a i f =1a di f /dt =-50a/ m sv r =30v 60 110 ns i rm maximum reverse recovery current tj=125 c vr = 400v i f =30a di f /dt = -240 a/ m s di f /dt = -500 a/ m s40 45 a s factor softness factor tj = 125 cv r = 400v i f =30a di f /dt = -500 a/ m s 0.5 / dynamic electrical characteristics turn-off switching (see fig.6) symbol parameter test conditions min typ max unit t fr forward recovery time tj=25 c i f =30 a, di f /dt = 240 a/ m s measured at, 1.1 v f max 500 ns v fp peak forward voltage tj=25 c i f =30a, di f /dt = 240 a/ m s i f =150a, di f /dt = 500 a/ m s10 8 v turn-on switching (see fig.7) test pulses widths : * tp = 380 m s, duty cycle < 2% ** tp = 5 ms , duty cycle < 2% ? STTB3006P(i) 2/6
t t f = 1/t = t/t pwm fig. 1 : snubber diode. total losses due to the diode p = p1+ p2+ p3+ p4 watts switching losses off : p3 watts on : p4 watts (fig. 6 & 7) conduction losses p1 watts (fig. 5) reverse losses p2 watts (fig. 5 ) the turboswitch obo is especially designed to provide the lowest overall power losses in any application such as snubbing,clamping, demagne- tization and rectification. in such applications (fig.1 to fig.4), the way of calculating the power losses is given below : application data fig. 3 : demagnetizing diode. pwm t t f = 1/t = t/t fig. 2 : clamping diode. fig. 4 : rectifier diode. ? STTB3006P(i) 3/6
turn-off losses : p3 = v r i rm 2 s f 6 x di f M dt turn-off losses : (with non negligible serial inductance) p3' = v r i rm 2 s f 6 xdi f M dt + l i rm 2 f 2 p3 and p3' are suitable for power mosfet and igbt i i f rd i r v r v to v f v fig. 5: static characteristics di f /dt = v r /l di /dt r tb ta i rm i rm v r v r i v t s = tb/ta trr = ta + tb s = tb/ta trr = ta + tb di /dt f di /dt r tb ta i v t freewheeling operation rectifier operation fig. 6: turn-off characteristics i f v f v fp 1.1v f v f f di /dt 0 0t t i fmax tfr fig. 7: turn-on characteristics conduction losses : p1 = v t0 .i f(av) +r d .i f 2 (rms) with v t0 = 1.00 v r d = 0.010 ohm (max values at 125 c) reverse losses : p2 = v r .i r .(1- d ) turn-on losses : p4 = 0.4 (v fp -v f ).i fmax .t fr .f application data (cont'd) ? STTB3006P(i) 4/6
package data sod93 plastic a m n e i p g h j f b c l cooling method : c. marking : type number. weight : 5.2 g. recommended torque value : 0.8m.n. maximum torque value : 1.0 m.n. ref. dimensions millimeters inches min. max. min. max. a 14.7 15.2 0.578 0.596 b 16.2 0.637 c 31 typ 1.220 typ d 18 typ 0.708 typ e 12.2 0.480 g 3.95 4.15 0.155 0.163 h 4.7 4.9 0.185 0.193 i 4 4.1 0.157 0.161 j 1.9 2.1 0.062 0.075 l 0.5 0.78 0.019 0.030 m 2.5 typ 0.098 typ n 10.8 11.1 0.425 0.437 p 1.1 1.3 0.043 0.051 package data dop3i isolated plastic h r4.6 g c a i d b p n l m j cooling method : c. marking : type number. weight : 4.6 g. recommended torque value : 0.8 m.n. maximum torque value : 1.0 m.n. electrical isolation : 2500v rms capacitance :12 pf ref. dimensions millimeters inches min. max. min. max. a 15.10 15.50 0.594 0.611 b 20.70 21.10 0.814 0.831 c 14.30 15.60 0.561 0.615 d 16.10 16.50 0.632 0.650 g 3.40 - 0.133 - h 4.40 4.60 o.173 0.182 i 4.08 4.17 0.161 0.164 j 1.45 1.55 0.057 0.062 l 0.50 0.70 0.019 0.028 m 2.70 2.90 0.106 0.115 n 10.80 11.30 0.42 0.45 p 1.20 1.40 0.047 0.056 ? STTB3006P(i) 5/6
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems withoutexpress written approval of sgs-thomson microelectronics. ? 1995 sgs-thomson microelectronics - printed in italy - all rights reserved. sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. ? STTB3006P(i) 6/6
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